| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
IS61VPS51232-166TQI |
512K x 32 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1142 |
IS61VPS51232-200TQ |
512K x 32 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1143 |
IS61VPS51232-200TQI |
512K x 32 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1144 |
IS61VPS51236-166B |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1145 |
IS61VPS51236-166BI |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1146 |
IS61VPS51236-166TQ |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1147 |
IS61VPS51236-166TQI |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1148 |
IS61VPS51236-200B |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1149 |
IS61VPS51236-200BI |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1150 |
IS61VPS51236-200TQ |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1151 |
IS61VPS51236-200TQI |
512K x 36 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 1152 |
ISL12030 |
Low Power RTC with 50/60 Cycle AC Input, Alarms and Daylight Savings Correction |
Intersil |
| 1153 |
ISL12032 |
Low Power RTC with Battery Backed SRAM and 50/60 Cycle AC Input and Xtal Back-up |
Intersil |
| 1154 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1155 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1156 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1157 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1158 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1159 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1160 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1161 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1162 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1163 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1164 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1165 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 1166 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1167 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1168 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1169 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1170 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
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