No. |
Part Name |
Description |
Manufacturer |
11431 |
CAM09121 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11432 |
CAMD6254 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11433 |
CAMG6201 |
DAICO Broadband Amplifiers |
DAICO Industries |
11434 |
CAMH9115 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11435 |
CAMH9126 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11436 |
CAMH9223 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11437 |
CAML9210 |
DAICO Narrowband Amplifiers |
DAICO Industries |
11438 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
11439 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
11440 |
CC2595 |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
11441 |
CC2595RGTR |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
11442 |
CC2595RGTT |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
11443 |
CCS1930 |
1.85-2.0 GHz, 1 W amplifier chip set( CMM1301-AM) |
CELERITEK |
11444 |
CCS1933 |
1.85-2.0 GHz, 2 W amplifier chip set (CFK2162-P3) |
CELERITEK |
11445 |
CD7607CP |
Video IF Amplifier for Color and Monochrome Television Receiver |
Shaoxing Silicore Technology |
11446 |
CEM3360 |
DUAL VOLTAGE CONTROLED AMPLIFIER |
etc |
11447 |
CFMS4 |
SMD Small Signal Transistor Dual PNP General Purpose Amplifier/Switc |
Central Semiconductor |
11448 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
11449 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
11450 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
11451 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
11452 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
11453 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
11454 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
11455 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
11456 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
11457 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
11458 |
CGA-3318 |
Dual CATV Broadband High Linearity SiGe HBT Amplifier |
Stanford Microdevices |
11459 |
CGA-6618 |
DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER |
Stanford Microdevices |
11460 |
CGA-7718Z |
50 - 1000 MHz InGaP HBT High Linearity Push-Pull Amplifier |
Qorvo |
| | | |