| No. |
Part Name |
Description |
Manufacturer |
| 11431 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 11432 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 11433 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 11434 |
G7189 |
GaAsP photodiode |
Hamamatsu Corporation |
| 11435 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 11436 |
G7751-02 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11437 |
G7751-21 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11438 |
G7752-10 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11439 |
G7754-01 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11440 |
G7754-03 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 11441 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11442 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11443 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 11444 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11445 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11446 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11447 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11448 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 11449 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11450 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11451 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11452 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11453 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11454 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11455 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 11456 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 11457 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 11458 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 11459 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 11460 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
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