| No. |
Part Name |
Description |
Manufacturer |
| 11461 |
CAM09120 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11462 |
CAM09121 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11463 |
CAMD6254 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11464 |
CAMG6201 |
DAICO Broadband Amplifiers |
DAICO Industries |
| 11465 |
CAMH9115 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11466 |
CAMH9126 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11467 |
CAMH9223 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11468 |
CAML9210 |
DAICO Narrowband Amplifiers |
DAICO Industries |
| 11469 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 11470 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 11471 |
CC2595 |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 11472 |
CC2595RGTR |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 11473 |
CC2595RGTT |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 11474 |
CCS1930 |
1.85-2.0 GHz, 1 W amplifier chip set( CMM1301-AM) |
CELERITEK |
| 11475 |
CCS1933 |
1.85-2.0 GHz, 2 W amplifier chip set (CFK2162-P3) |
CELERITEK |
| 11476 |
CD7607CP |
Video IF Amplifier for Color and Monochrome Television Receiver |
Shaoxing Silicore Technology |
| 11477 |
CEM3360 |
DUAL VOLTAGE CONTROLED AMPLIFIER |
etc |
| 11478 |
CFMS4 |
SMD Small Signal Transistor Dual PNP General Purpose Amplifier/Switc |
Central Semiconductor |
| 11479 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11480 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11481 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11482 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 11483 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 11484 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 11485 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 11486 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 11487 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 11488 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 11489 |
CGA-3318 |
Dual CATV Broadband High Linearity SiGe HBT Amplifier |
Stanford Microdevices |
| 11490 |
CGA-6618 |
DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER |
Stanford Microdevices |
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