No. |
Part Name |
Description |
Manufacturer |
11491 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
11492 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
11493 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
11494 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
11495 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
11496 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
11497 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
11498 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
11499 |
GTH111/74S20 |
Dual 4-input NAND gate |
Mullard |
11500 |
GU-3A |
Gate unit for thyristor |
TOSHIBA |
11501 |
GU-4A |
Gate unit for thyristor |
TOSHIBA |
11502 |
GU-5 |
Gate unit for thyristor |
TOSHIBA |
11503 |
GU-6 |
Gate unit for thyristor |
TOSHIBA |
11504 |
GU-C40 |
MITSUBISHI GATE DRIVER FOR GCT THYRISTOR High Power Inverter Use |
Mitsubishi Electric Corporation |
11505 |
GU-C40 |
GATE DRIVER FOR GCT THYRISTOR High Power Inverter Use |
Powerex Power Semiconductors |
11506 |
H102 |
Quad 2-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
11507 |
H102 |
Quad 2-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
11508 |
H102 |
Quad 2-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
11509 |
H103 |
Triple 3-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
11510 |
H103 |
Triple 3-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
11511 |
H103 |
Triple 3-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
11512 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), standard temperature range |
SGS-ATES |
11513 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
11514 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), extended temperature range |
SGS-ATES |
11515 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), standard temperature range |
SGS-ATES |
11516 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), intermediate temperature range |
SGS-ATES |
11517 |
H105 |
Expandable dual 2-wide 2-input AND-OR-INVERT gate |
SGS-ATES |
11518 |
H109 |
Dual 4-input expandable power AND gate (open collector), standard temperature range |
SGS-ATES |
11519 |
H109 |
Dual 4-input expandable power AND gate (open collector), intermediate temperature range |
SGS-ATES |
11520 |
H109 |
Dual 4-input expandable power AND gate (open collector), extended temperature range |
SGS-ATES |
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