| No. |
Part Name |
Description |
Manufacturer |
| 11521 |
RT1P141U |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11522 |
RT1P441M |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11523 |
RT1P441MC |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11524 |
RT1P441MS |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11525 |
RT1P441MU |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11526 |
RT1P441T |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11527 |
RT5P230C |
Transistor with resistor for switching application. Silicon PNP epitaxial type. |
Isahaya Electronics Corporation |
| 11528 |
RUR-D1610 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
General Electric Solid State |
| 11529 |
RUR-D1615 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 150V. |
General Electric Solid State |
| 11530 |
RUR-D1620 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 200V. |
General Electric Solid State |
| 11531 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
| 11532 |
RUR-D815 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V. |
General Electric Solid State |
| 11533 |
RUR-D820 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. |
General Electric Solid State |
| 11534 |
S1003A |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11535 |
S1010 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11536 |
S1071 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11537 |
S1151 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11538 |
S1166 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11539 |
S1182 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11540 |
S1200 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11541 |
S1201 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11542 |
S1229 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11543 |
S1230 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 11544 |
S1253 |
Silicon NPN epitaxial planar transistor fT=7GHz |
TOSHIBA |
| 11545 |
S1254 |
Silicon NPN epitaxial planar transistor fT=7GHz |
TOSHIBA |
| 11546 |
S1375 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 11547 |
S1376 |
Silicon PNP epitaxial medium power transistor |
TOSHIBA |
| 11548 |
S1420 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11549 |
S1423 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11550 |
S1732 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| | | |
