| No. |
Part Name |
Description |
Manufacturer |
| 11551 |
GKI10526 |
Silicon N-Channel MOSFET |
Sanken |
| 11552 |
GN1010 |
GaAs N-Channel MES IC |
Panasonic |
| 11553 |
GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information |
Dynex Semiconductor |
| 11554 |
GP2400ESM12 |
Powerline N-Channel Single Switch IGBT Module Preliminary Information |
Dynex Semiconductor |
| 11555 |
GP3NB60K |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
| 11556 |
GP3NB60KD |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
| 11557 |
GP3NB60KDFP |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT |
ST Microelectronics |
| 11558 |
GP400DDS12 |
Powerline N-Channel Dual Switch IGBT Module |
Dynex Semiconductor |
| 11559 |
GP401LSS18 |
Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information |
Dynex Semiconductor |
| 11560 |
GP800DDS12 |
Powerline N-Channel Dual Switch IGBT Module |
Dynex Semiconductor |
| 11561 |
GP800FSS12 |
Powerline N-Channel Single Switch IGBT Module Preliminary Information |
Dynex Semiconductor |
| 11562 |
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 11563 |
GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 11564 |
GT20G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 11565 |
H02N60 |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11566 |
H02N60E |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11567 |
H02N60F |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11568 |
H02N60I |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11569 |
H02N60J |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11570 |
H06N60 |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11571 |
H11G1 |
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
Motorola |
| 11572 |
H11G2 |
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
Motorola |
| 11573 |
H11G3 |
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
Motorola |
| 11574 |
H2N7000 |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
Hi-Sincerity Microelectronics |
| 11575 |
H2N7002 |
N-CHANNEL TRANSISTOR |
Hi-Sincerity Microelectronics |
| 11576 |
H603AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 11577 |
HAF70009 |
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET |
Intersil |
| 11578 |
HCT7000M |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 11579 |
HCT7000MTX |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 11580 |
HCT7000MTXV |
N-channel enhancement mode MOS transistor |
Optek Technology |
| | | |
