No. |
Part Name |
Description |
Manufacturer |
11551 |
MP4101 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
11552 |
MP4104 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11553 |
MP4301 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11554 |
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11555 |
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11556 |
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11557 |
MP4501 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11558 |
MP4502 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11559 |
MP4503 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11560 |
MP4504 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11561 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11562 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
11563 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11564 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11565 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11566 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11567 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11568 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
11569 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11570 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
11571 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11572 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11573 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
11574 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11575 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
11576 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11577 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11578 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11579 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11580 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
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