| No. |
Part Name |
Description |
Manufacturer |
| 11581 |
KSD362 |
NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT) |
Samsung Electronic |
| 11582 |
KSD363 |
300 V, 6 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11583 |
KSD471A |
NPN (AUDIO FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
| 11584 |
KSD5000 |
1500 V, 2.5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11585 |
KSD5001 |
NPN (COLOR TV GORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11586 |
KSD5002 |
COLOR TV HORIZONTAL OUT PUT APPLICATIONS (DAMPER DIODE BUILT IN) |
Samsung Electronic |
| 11587 |
KSD5003 |
NPN (COLOR TV HORZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN) |
Samsung Electronic |
| 11588 |
KSD5004 |
1500 V, 2.5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11589 |
KSD5005 |
NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11590 |
KSD5006 |
1500 V, 5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11591 |
KSD5007 |
NPN COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11592 |
KSD5010 |
1500 V, 2.5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11593 |
KSD5011 |
NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11594 |
KSD5012 |
1500 V, 5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11595 |
KSD5013 |
NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT) |
Samsung Electronic |
| 11596 |
KSD5014 |
1500 V, 2.5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11597 |
KSD5015 |
NPN(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11598 |
KSD5016 |
1500 V, 5 A, NPN triple diffused planar silicon transistor |
Samsung Electronic |
| 11599 |
KSD5017 |
NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
Samsung Electronic |
| 11600 |
KSD526 |
80 V, 4 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11601 |
KSD560 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 11602 |
KSD568 |
100 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11603 |
KSD569 |
100 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11604 |
KSD794 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
| 11605 |
KSD794A |
70 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11606 |
KSD880 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 11607 |
KSD882 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 11608 |
KSD985 |
150 V, +/-1.5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 11609 |
KSD986 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 11610 |
KSK117 |
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.) |
Samsung Electronic |
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