| No. |
Part Name |
Description |
Manufacturer |
| 11581 |
MPSA62 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11582 |
MPSA63 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11583 |
MPSA64 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11584 |
MPSA65 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 11585 |
MPSA66 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 11586 |
MPSA70 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 11587 |
MPSA75 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11588 |
MPSA76 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11589 |
MPSA77 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11590 |
MPSA92 |
PNP Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
| 11591 |
MPSA92M |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
DC Components |
| 11592 |
MPSA93 |
PNP Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
| 11593 |
MPSH10 |
NPN Epitaxial Silicon VHF/UHF Transistor |
Samsung Electronic |
| 11594 |
MPSH11 |
NPN Epitaxial Silicon VHF/UHF Transistor |
Samsung Electronic |
| 11595 |
MPSH17 |
NPN Epitaxial Silicon CATV Transistor |
Samsung Electronic |
| 11596 |
MPSH24 |
NPN Epitaxial Silicon VHF Transistor |
Samsung Electronic |
| 11597 |
MPSL01 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 11598 |
MPSL51 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 11599 |
MSD6100 |
Silicon epitaxial dual switching diode |
Motorola |
| 11600 |
MSD6101 |
Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications |
Motorola |
| 11601 |
MSD6102 |
Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers |
Motorola |
| 11602 |
MSD6150 |
Silicon epitaxial dual diode designed for consumer applications |
Motorola |
| 11603 |
MSD7000 |
Silicon Epitaxial Dual series diode |
Motorola |
| 11604 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11605 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11606 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11607 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11608 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11609 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11610 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
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