| No. |
Part Name |
Description |
Manufacturer |
| 11581 |
MDD16 |
Si rectifier diode module (bridge branch pair), possibly equivalent SKKD15 |
RFT |
| 11582 |
MDD172 |
High Power Diode Modules |
IXYS Corporation |
| 11583 |
MDD25 |
Si rectifier diode module (bridge branch pair), possibly equivalent DD31N |
RFT |
| 11584 |
MDD255 |
High Power Diode Modules |
IXYS Corporation |
| 11585 |
MDD310 |
High Power Diode Modules |
IXYS Corporation |
| 11586 |
MDD312 |
High Power Diode Modules |
IXYS Corporation |
| 11587 |
MDD312-14N1 |
High Power Diode Modules |
IXYS Corporation |
| 11588 |
MDD40 |
Si rectifier diode module (bridge branch pair), possibly equivalent SKKD16 |
RFT |
| 11589 |
MDO500 |
High Power Diode Modules |
IXYS Corporation |
| 11590 |
MDO500-12N1 |
High Power Diode Modules |
IXYS Corporation |
| 11591 |
MDO500-14N1 |
High Power Diode Modules |
IXYS Corporation |
| 11592 |
MDO500-16N1 |
High Power Diode Modules |
IXYS Corporation |
| 11593 |
MDO500-18N1 |
High Power Diode Modules |
IXYS Corporation |
| 11594 |
MDO500-20N1 |
High Power Diode Modules |
IXYS Corporation |
| 11595 |
MDO500-22N1 |
High Power Diode Modules |
IXYS Corporation |
| 11596 |
MI1A3 |
Schottky Barrier Diode - 30V |
Sanken |
| 11597 |
MI2A3 |
Schottky Barrier Diode - 30V |
Sanken |
| 11598 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 11599 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 11600 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 11601 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 11602 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 11603 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 11604 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 11605 |
ML3101 |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| 11606 |
ML3401 |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| 11607 |
ML3411 |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| 11608 |
ML40115C |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| 11609 |
ML40115N |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| 11610 |
ML40115R |
10 mA, laser diode for optical information system |
Mitsubishi Electric Corporation |
| | | |
