No. |
Part Name |
Description |
Manufacturer |
11581 |
MNDS26F32MJ/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11582 |
MNDS26F32MJR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11583 |
MNDS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11584 |
MNDS26F32MW-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11585 |
MNDS26F32MW/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11586 |
MNDS26F32MWG/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11587 |
MNDS26F32MWGRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11588 |
MNDS26F32MWR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11589 |
MNDS26F32MWRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
11590 |
MOC256 |
SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT |
Motorola |
11591 |
MP2000A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
11592 |
MP2100A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
11593 |
MP2200A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
11594 |
MP2300A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
11595 |
MP2400A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
11596 |
MPC9817 |
Clock Generator for PowerQUICC and PowerPC Microprocessors and Microcontrollers |
Freescale (Motorola) |
11597 |
MPS6530 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11598 |
MPS6531 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11599 |
MPS6532 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11600 |
MPS6533 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11601 |
MPS6534 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11602 |
MPS6535 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
11603 |
MPT20 |
Plastic silicon 3-layer bilateral triggers are two-terminal devices that exibit bi-directional negative resistantce switching characteristics |
Motorola |
11604 |
MS2202 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Advanced Power Technology |
11605 |
MS2209 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION |
Microsemi |
11606 |
MS2210 |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Advanced Power Technology |
11607 |
MS2211 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Microsemi |
11608 |
MS2212 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Advanced Power Technology |
11609 |
MS2215 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Microsemi |
11610 |
MSC1004 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
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