| No. |
Part Name |
Description |
Manufacturer |
| 11611 |
MDL50200 |
200 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 11612 |
MDL50400 |
400 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 11613 |
MDL50600 |
600 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 11614 |
MDL50800 |
800 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 11615 |
MF4A-100CD |
Butterworth fourth-order low-pass switched-capacitor filter |
Texas Instruments |
| 11616 |
MF4A-100CP |
Butterworth fourth-order low-pass switched-capacitor filter |
Texas Instruments |
| 11617 |
MF4A-100ID |
Butterworth fourth-order low-pass switched-capacitor filter |
Texas Instruments |
| 11618 |
MF4A-100IP |
Butterworth fourth-order low-pass switched-capacitor filter |
Texas Instruments |
| 11619 |
MF4A-100MP |
Butterworth fourth-order low-pass switched-capacitor filter |
Texas Instruments |
| 11620 |
MFE3001 |
Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 11621 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11622 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11623 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11624 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11625 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 11626 |
MJ2955 |
115.000W Power PNP Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 11627 |
MJE13002 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 11628 |
MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 11629 |
MJE13004 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 4.000A Ic, 10 - 60 hFE. |
Continental Device India Limited |
| 11630 |
MJE13005 |
2.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 60 hFE. |
Continental Device India Limited |
| 11631 |
MJE13006 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 8.000A Ic, 8 - 60 hFE. |
Continental Device India Limited |
| 11632 |
MJE13007 |
80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5 - 30 hFE. |
Continental Device India Limited |
| 11633 |
MJE15028 |
50.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 11634 |
MJE15029 |
50.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 11635 |
MJE15030 |
50.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 11636 |
MJE15031 |
50.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 11637 |
MJE15032 |
50.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 11638 |
MJE15033 |
50.000W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 11639 |
MJE170 |
12.500W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 11640 |
MJE171 |
12.500W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
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