| No. |
Part Name |
Description |
Manufacturer |
| 11671 |
BU310 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
| 11672 |
BU311 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
| 11673 |
BU312 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
| 11674 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 11675 |
BU326S |
High voltage transistor for switching applications |
SGS-ATES |
| 11676 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 11677 |
BU406 |
High voltage transistor for switching applications |
SGS-ATES |
| 11678 |
BU406 |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
USHA India LTD |
| 11679 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11680 |
BU406D |
High voltage transistor for switching applications |
SGS-ATES |
| 11681 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 11682 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 11683 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 11684 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 11685 |
BU407 |
High voltage transistor for switching applications |
SGS-ATES |
| 11686 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 11687 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11688 |
BU407D |
High voltage transistor for switching applications |
SGS-ATES |
| 11689 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 11690 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 11691 |
BU408 |
High voltage transistor for switching applications |
SGS-ATES |
| 11692 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 11693 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11694 |
BU408D |
High voltage transistor for switching applications |
SGS-ATES |
| 11695 |
BU409 |
High voltage transistor for switching applications |
SGS-ATES |
| 11696 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 11697 |
BU508AF |
High voltage NPN power transistor for standard definition CRT display |
ST Microelectronics |
| 11698 |
BU508AW |
High voltage NPN power transistor for standard definition CRT display |
ST Microelectronics |
| 11699 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 11700 |
BU606 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
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