| No. |
Part Name |
Description |
Manufacturer |
| 11701 |
IRF1018ESL |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11702 |
IRF1018ESLPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11703 |
IRF1018ESTRLPBF |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11704 |
IRF1104 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 11705 |
IRF1104L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11706 |
IRF1104LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11707 |
IRF1104PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 11708 |
IRF1104S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11709 |
IRF1104STRL |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11710 |
IRF1104STRLPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11711 |
IRF1104STRR |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 11712 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 11713 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 11714 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 11715 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11716 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 11717 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 11718 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 11719 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11720 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11721 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 11722 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 11723 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11724 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11725 |
IRF123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 11726 |
IRF123 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 11727 |
IRF123 |
Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11728 |
IRF123 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11729 |
IRF130 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 11730 |
IRF130 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
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