| No. |
Part Name |
Description |
Manufacturer |
| 11701 |
2SC3574 |
NPN Silicon Power Transistor |
NEC |
| 11702 |
2SC3577 |
Silicon NPN Power Transistors TO-3PFa package |
Savantic |
| 11703 |
2SC3591 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 11704 |
2SC3610 |
Power Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 11705 |
2SC3611 |
Power Device - Power Transistors - Others |
Panasonic |
| 11706 |
2SC3611 |
Power Device - Power Transistors - Others |
Panasonic |
| 11707 |
2SC3617 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 11708 |
2SC3618 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 11709 |
2SC3619 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 11710 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 11711 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 11712 |
2SC3626 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 11713 |
2SC3627 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 11714 |
2SC3628 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11715 |
2SC3629 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11716 |
2SC3630 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 11717 |
2SC3636 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 11718 |
2SC3637 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 11719 |
2SC3638 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 11720 |
2SC3658 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 11721 |
2SC3658 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 11722 |
2SC3659 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 11723 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11724 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11725 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 11726 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 11727 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 11728 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 11729 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 11730 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| | | |
