| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
CY7C1360A-150BGC |
256K x 36 pipelined SRAM, 150MHz |
Cypress |
| 1172 |
CY7C1362A-150AC |
512K x 18 pipelined SRAM, 150MHz |
Cypress |
| 1173 |
CY7C1362A-150AJC |
512K x 18 pipelined SRAM, 150MHz |
Cypress |
| 1174 |
CY7C1362A-150BGC |
512K x 18 pipelined SRAM, 150MHz |
Cypress |
| 1175 |
DB3 |
BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW |
Shanghai Sunrise Electronics |
| 1176 |
EFT306 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 1177 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 1178 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 1179 |
EFT317 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 1180 |
EFT319 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 1181 |
EFT320 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
| 1182 |
EN6546 |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SSFP |
ON Semiconductor |
| 1183 |
EN8934 |
P-Channel Power MOSFET, -30V, -2A, 150mOhm, Single MCPH6 |
ON Semiconductor |
| 1184 |
ENA1087 |
RF Transistor, 12V, 150mA, fT=4.7GHz, NPN Single PCP |
ON Semiconductor |
| 1185 |
ENA1280 |
RF Transistor, 8V, 150mA, fT=16GHz, NPN Single MCPH4 |
ON Semiconductor |
| 1186 |
ENA1601 |
RF Transistor, 8V, 150mA, fT=16GHz NPN Dual MCPH6 |
ON Semiconductor |
| 1187 |
ENA1867 |
P-Channel Power MOSFET, -30V, -2A, 150m Ohm, Single SCH6 |
ON Semiconductor |
| 1188 |
FA4105A |
V(cc): 90V; BW: 150MHz; tr: 2.5ns; I(cc): 25mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 1189 |
FA4113 |
V(cc): 100V; BW: 150MHz; tr: 3.0ns; I(cc): 45mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 1190 |
GS81032AQ-150 |
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 1191 |
GS81032AQ-150I |
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 1192 |
GS81032AT-150 |
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 1193 |
GS81032AT-150I |
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 1194 |
GS8160E18T-150 |
7.5ns 150MHz 1M x 18 synchronous burst SRAM |
GSI Technology |
| 1195 |
GS8160E18T-150I |
7.5ns 150MHz 1M x 18 synchronous burst SRAM |
GSI Technology |
| 1196 |
GS8160E32T-150 |
7.5ns 150MHz 512K x 32 synchronous burst SRAM |
GSI Technology |
| 1197 |
GS8160E32T-150I |
7.5ns 150MHz 512K x 32 synchronous burst SRAM |
GSI Technology |
| 1198 |
GS8160E36T-150 |
7.5ns 150MHz 512K x 36 synchronous burst SRAM |
GSI Technology |
| 1199 |
GS8160E36T-150I |
7.5ns 150MHz 512K x 36 synchronous burst SRAM |
GSI Technology |
| 1200 |
GS816118T-150 |
7.5ns 150MHz 1M x 18 pipelined and flow through synchronous NBT SRAM |
GSI Technology |
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