| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
MMXZ5255B |
200 mW Zener Diodes 2.4 to 39 Volts |
Micro Commercial Components |
| 1172 |
MMXZ5256B |
200 mW Zener Diodes 2.4 to 39 Volts |
Micro Commercial Components |
| 1173 |
MMXZ5257B |
200 mW Zener Diodes 2.4 to 39 Volts |
Micro Commercial Components |
| 1174 |
MMXZ5258B |
200 mW Zener Diodes 2.4 to 39 Volts |
Micro Commercial Components |
| 1175 |
MMXZ5259B |
200 mW Zener Diodes 2.4 to 39 Volts |
Micro Commercial Components |
| 1176 |
MPS1983 |
NPN silicon high frequency transistor 2.4dB 900MHz |
Motorola |
| 1177 |
MPS901 |
NPN silicon high frequency transistor 2.4dB 900MHz |
Motorola |
| 1178 |
MZ4617 |
Zener diode, 500 mW, zener voltage 2.4V |
Motorola |
| 1179 |
MZ500-1 |
400mW Miniature plastic encalsulated Zener Diode, 2.4V |
Motorola |
| 1180 |
NRF2401 |
Single chip 2.4 GHz Transceiver |
etc |
| 1181 |
NRF2401-EVKIT |
Single chip 2.4 GHz Transceiver |
etc |
| 1182 |
NTE1387 |
Integrated Circuit Dual, Audio Power Amplifier, 2.4W/Ch |
NTE Electronics |
| 1183 |
NTF2955 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 1184 |
NTF2955T1 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 1185 |
NTF2955T1G |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 1186 |
ONET8521T |
A 9 GHz, 2.4 KOhms Transimpedance Amplifier with RSSI 0-DIESALE -40 to 100 |
Texas Instruments |
| 1187 |
ONET8521TY |
A 9 GHz, 2.4 KOhms Transimpedance Amplifier with RSSI 0-DIESALE -40 to 100 |
Texas Instruments |
| 1188 |
PBSS4032PT |
30 V, 2.4 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 1189 |
PBSS4032PT |
30 V, 2.4 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 1190 |
PD23-02 |
PHOTO DIODES 2.4;3.6 UM |
etc |
| 1191 |
PMB662X |
Transceiver for Bluetooth FH-SS 2.4 Ghz Systems |
Infineon |
| 1192 |
PSMN2R2-25YLC |
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
| 1193 |
PSMN2R2-25YLC |
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 1194 |
PSMN2R4-30MLD |
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology |
Nexperia |
| 1195 |
PSMN2R4-30MLD |
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology |
NXP Semiconductors |
| 1196 |
PSMN2R4-30YLD |
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 1197 |
PSMN2R4-30YLD |
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
NXP Semiconductors |
| 1198 |
PSMN2R5-30YL |
N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK |
Nexperia |
| 1199 |
PSMN2R5-30YL |
N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK |
NXP Semiconductors |
| 1200 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
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