No. |
Part Name |
Description |
Manufacturer |
1171 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1172 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
1173 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
1174 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
1175 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
1176 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
1177 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
1178 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
1179 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
1180 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
1181 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
1182 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
1183 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
1184 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1185 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1186 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1187 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1188 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1189 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1190 |
HY534256ALJ-45 |
256K x 4-bit CMOS DRAM, 45ns, low power |
Hynix Semiconductor |
1191 |
HY534256ALJ-50 |
256K x 4-bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
1192 |
HY534256ALJ-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
1193 |
HY534256ALJ-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
1194 |
HY534256ALJ-80 |
256K x 4-bit CMOS DRAM, 80ns, low power |
Hynix Semiconductor |
1195 |
HY534256ALS-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
1196 |
HY534256ALS-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
1197 |
HY534256ALS-80 |
256K x 4-bit CMOS DRAM, 80ns, low power |
Hynix Semiconductor |
1198 |
HY57V641620HGLT-5 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz |
Hynix Semiconductor |
1199 |
HY57V641620HGLT-55 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz |
Hynix Semiconductor |
1200 |
HY57V641620HGLT-55I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz |
Hynix Semiconductor |
| | | |