| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
FDB060AN08A0_NL |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package |
Fairchild Semiconductor |
| 1172 |
FDB16AN08A0 |
N-Channel PowerTrench � MOSFET 75V, 58A, 16mOhm |
Fairchild Semiconductor |
| 1173 |
FDD16AN08A0 |
N-Channel UltraFET � Trench MOSFET 75V, 50A, 16mOhm |
Fairchild Semiconductor |
| 1174 |
FDH038AN08A1 |
N-Channel PowerTrench; MOSFET, 75V, 80A, 3.8 MOhm TO-247 Package |
Fairchild Semiconductor |
| 1175 |
FDH047AN08A0 |
N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 1176 |
FDI047AN08A0 |
75V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 1177 |
FDMS0308AS |
30V N-Channel PowerTrench� SyncFET� |
Fairchild Semiconductor |
| 1178 |
FDP047AN08A0 |
N-Channel UltraFET � Trench MOSFET 75V, 80A, 4.7mOhm |
Fairchild Semiconductor |
| 1179 |
FDP060AN08A0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB Package |
Fairchild Semiconductor |
| 1180 |
FDP060AN08A0_NL |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB Package |
Fairchild Semiconductor |
| 1181 |
FDP16AN08A0 |
N-Channel PowerTrench � MOSFET 75V, 58A, 16mOhm |
Fairchild Semiconductor |
| 1182 |
FDP75N08A |
N-Channel UniFETTM MOSFET 75V, 75A, 11m? |
Fairchild Semiconductor |
| 1183 |
FPD87208AXAVS |
+2.5V Low EMI, Low Dynamic Power XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling RSDStrade OutputsRSDStrade ... |
National Semiconductor |
| 1184 |
FRH08A15 |
Schottky Barrier diode |
Nihon |
| 1185 |
FSA8008A |
Audio Jack Detection and Configuration Switch |
Fairchild Semiconductor |
| 1186 |
FSS100-008A |
Silicon Schottky Diodes |
IXYS |
| 1187 |
GBPC2508A |
800V Bridge in a GBPC-A package |
International Rectifier |
| 1188 |
GBPC3508A |
800V Bridge in a GBPC-A package |
International Rectifier |
| 1189 |
GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 1190 |
GCU08AA-130 |
GATE COMMUTATED TURN-OFF THYRISTOR UNIT HIGH POWER INVERTER USE |
Powerex Power Semiconductors |
| 1191 |
GES5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 1192 |
GMS81508A |
USERS MANUAL |
Hynix Semiconductor |
| 1193 |
GP08A |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1194 |
GP08A |
Glass Passivated Junction Rectifiers, Forward Current 0.8A |
Vishay |
| 1195 |
GS71108A |
1Mb Async SRAMs |
GSI Technology |
| 1196 |
GS71108AJ-10 |
10ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
| 1197 |
GS71108AJ-10I |
128K x 8 1Mb Asynchronous SRAM |
GSI Technology |
| 1198 |
GS71108AJ-12 |
128K x 8 1Mb Asynchronous SRAM |
GSI Technology |
| 1199 |
GS71108AJ-12I |
128K x 8 1Mb Asynchronous SRAM |
GSI Technology |
| 1200 |
GS71108AJ-15 |
15ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
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