No. |
Part Name |
Description |
Manufacturer |
1171 |
IDB12E120 |
Silicon Power Diodes - 12A EmCon in TO263 |
Infineon |
1172 |
IDB18E120 |
Silicon Power Diodes - 18A EmCon in TO263 |
Infineon |
1173 |
IDB30E120 |
Silicon Power Diodes - 30A EmCon in TO263 |
Infineon |
1174 |
IDP04E120 |
Silicon Power Diodes - 4A EmCon in TO220-2 |
Infineon |
1175 |
IDP09E120 |
Silicon Power Diodes - 9A EmCon in TO220-2 |
Infineon |
1176 |
IDP12E120 |
Silicon Power Diodes - 12A EmCon in TO220-2 |
Infineon |
1177 |
IDP18E120 |
Silicon Power Diodes - 18A EmCon in TO220-2 |
Infineon |
1178 |
IDP30E120 |
Silicon Power Diodes - 30A EmCon in TO220-2 |
Infineon |
1179 |
IDT7MP4120 |
1M x 32 CMOS STATIC RAM MODULE |
IDT |
1180 |
IGW08T120 |
IGBTs & DuoPacks - 8A 1200V TO247 IGBT |
Infineon |
1181 |
IGW15T120 |
IGBTs & DuoPacks - 15A 1200V TO247 IGBT |
Infineon |
1182 |
IGW25T120 |
IGBTs & DuoPacks - 25A 1200V TO247 IGBT |
Infineon |
1183 |
IGW40T120 |
IGBTs & DuoPacks - 40A 1200V TO247 IGBT |
Infineon |
1184 |
IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT |
Infineon |
1185 |
IHP10T120 |
IGBTs & DuoPacks - 10A / 1200V IGBT and 4A / 1200V Diode in DuoPack |
Infineon |
1186 |
IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack |
Infineon |
1187 |
IHW20T120 |
IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack |
Infineon |
1188 |
IHW40T120 |
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack |
Infineon |
1189 |
IKW08T120 |
IGBTs & DuoPacks - 8A 1200V TO247 IGBT+Diode |
Infineon |
1190 |
IKW15T120 |
IGBTs & DuoPacks - 15A 1200V TO247 IGBT+Diode |
Infineon |
1191 |
IKW25T120 |
IGBTs & DuoPacks - 25A 1200V TO247 IGBT+Diode |
Infineon |
1192 |
IKW40T120 |
IGBTs & DuoPacks - 40A 1200V TO247 IGBT+Diode |
Infineon |
1193 |
INA120 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
1194 |
INA120 |
INSTRUMENTATION AMPLIFIER |
Texas Instruments |
1195 |
IP120 |
1.5 AMP NEGATIVE VOLTAGE REGULATOR |
SemeLAB |
1196 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
1197 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
1198 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
1199 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
1200 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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