No. |
Part Name |
Description |
Manufacturer |
1171 |
BD787 |
Trans GP BJT NPN 60V 4A 3-Pin TO-225 Bulk |
New Jersey Semiconductor |
1172 |
BD788 |
Trans GP BJT PNP 60V 4A 3-Pin TO-225 Bulk |
New Jersey Semiconductor |
1173 |
BDCN-17-25 |
Bi-Directional Coupler High Power/ 50�� 824 to 2525 MHz |
Mini-Circuits |
1174 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1175 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1176 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1177 |
BF391 |
1.000W General Purpose NPN Plastic Leaded Transistor. 200V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
1178 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
1179 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
1180 |
BF457 |
10.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1181 |
BF458 |
10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1182 |
BF459 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
1183 |
BF495 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 125 hFE |
Continental Device India Limited |
1184 |
BFG424F |
NPN 25 GHz wideband transistor |
NXP Semiconductors |
1185 |
BFG424W |
NPN 25 GHz wideband transistor |
NXP Semiconductors |
1186 |
BFG425W |
NPN 25 GHz wideband transistor |
NXP Semiconductors |
1187 |
BFG425W |
NPN 25 GHz wideband transistor |
Philips |
1188 |
BG3020-7 |
25 Watt DC-DC Converters |
Power-One |
1189 |
BG3040-7 |
25 Watt DC-DC Converters (original) |
Power-One |
1190 |
BGA420 |
Silicon MMIC Amplifier in SIEGET 25 t... |
Infineon |
1191 |
BGA425 |
Silicon MMIC Amplifier in SIEGET 25 t... |
Infineon |
1192 |
BGA427 |
Silicon MMIC Amplifier in SIEGET 25 t... |
Infineon |
1193 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
1194 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
1195 |
BGB420 |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
Infineon |
1196 |
BGY66B |
120 MHz, 25 dB gain reverse amplifier |
NXP Semiconductors |
1197 |
BGY66B |
120 MHz, 25 dB gain reverse amplifier |
Philips |
1198 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
1199 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
1200 |
BLVDS16EVK |
16-Bit Bus LVDS Serializer/Deserializer - 25 - 80 MHz |
National Semiconductor |
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