| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
P4KE440CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 418 V, Vbr(max) = 462 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1172 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1173 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1174 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1175 |
P6KE440CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 418 V, Vbr(max) = 462 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1176 |
PB-IRF1010EL |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1177 |
PB-IRF1010EZL |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1178 |
PB-IRF1010NL |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1179 |
PB-IRF1010ZL |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1180 |
PB-IRF1104L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1181 |
PB-IRF1302L |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1182 |
PB-IRF1310NL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1183 |
PB-IRF1312L |
Leaded 80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1184 |
PB-IRF1404L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1185 |
PB-IRF1404ZL |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1186 |
PB-IRF1405L |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1187 |
PB-IRF1405ZL-7P |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package |
International Rectifier |
| 1188 |
PB-IRF1407L |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1189 |
PB-IRF1503L |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1190 |
PB-IRF2204L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1191 |
PB-IRF2804L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1192 |
PB-IRF2805L |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1193 |
PB-IRF2807L |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1194 |
PB-IRF2807ZL |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 1195 |
PB-IRF2903ZL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1196 |
PB-IRF2907ZL |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1197 |
PB-IRF3007L |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1198 |
PB-IRF3205L |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1199 |
PB-IRF3205ZL |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 1200 |
PB-IRF3315L |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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