| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
MRAL1720-9 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base, 9W |
TRW |
| 1172 |
MRAL2023 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 1173 |
MRAL2023-1.5 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 1174 |
MRAL2023-1.5H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 1.5W |
TRW |
| 1175 |
MRAL2023-12 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 1176 |
MRAL2023-12H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 12W |
TRW |
| 1177 |
MRAL2023-3 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 1178 |
MRAL2023-3H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 3W |
TRW |
| 1179 |
MRAL2023-6 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 1180 |
MRAL2023-6H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 6W |
TRW |
| 1181 |
MRAL2023-H-Series |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized |
TRW |
| 1182 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1183 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1184 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1185 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1186 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1187 |
P282 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1188 |
PMA0207 |
Metal Film Resistors, Precision, High Stability, Special stabilized metal alloy on high quality ceramic, Suitable for precision measuring techniques and precision control engineering |
Vishay |
| 1189 |
PMM0207 |
Special Stabilized Metal Film on High Quality Ceramic, Excellent Longtime Stability, Suitable for Precision Measuring Techniques and Precision Controls |
Vishay |
| 1190 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 1191 |
PT9700 |
1.5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1192 |
PT9700-series |
UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1193 |
PT9701B |
5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1194 |
PT9702B |
20W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1195 |
PT9703B |
10W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1196 |
PT9704A |
30W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 1197 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1198 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1199 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1200 |
RCME |
High Frequency Performance Molded Metal film Resistors |
Vishay |
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