No. |
Part Name |
Description |
Manufacturer |
1171 |
2N4033 |
80 V, PNP medium power transistor |
Philips |
1172 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1173 |
2N4048 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1174 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1175 |
2N4049 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1176 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1177 |
2N4050 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1178 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1179 |
2N4051 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1180 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1181 |
2N4052 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1182 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1183 |
2N4053 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1184 |
2N4070 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
1185 |
2N4071 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
1186 |
2N4075 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1187 |
2N4076 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1188 |
2N4115 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1189 |
2N4116 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1190 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1191 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1192 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1193 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1194 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1195 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1196 |
2N4150 |
Silicon NPN power transistor, TO-5 package |
Silicon Transistor Corporation |
1197 |
2N4210 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
1198 |
2N4211 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
1199 |
2N4231 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1200 |
2N4231 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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