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Datasheets for ER TRANSISTO

Datasheets found :: 18452
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2N4049 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
1172 2N4050 PNP germanium power transistor designed for high-current applications Motorola
1173 2N4050 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
1174 2N4051 PNP germanium power transistor designed for high-current applications Motorola
1175 2N4051 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
1176 2N4052 PNP germanium power transistor designed for high-current applications Motorola
1177 2N4052 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
1178 2N4053 PNP germanium power transistor designed for high-current applications Motorola
1179 2N4053 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
1180 2N4070 Silicon NPN Power Transistor, TO-3 (cont d) package Silicon Transistor Corporation
1181 2N4071 Silicon NPN Power Transistor, TO-3 (cont d) package Silicon Transistor Corporation
1182 2N4075 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
1183 2N4076 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
1184 2N4115 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
1185 2N4116 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
1186 2N4123 General Purpose NPN silicon switching and amplifier transistor ITT Semiconductors
1187 2N4124 General Purpose NPN silicon switching and amplifier transistor ITT Semiconductors
1188 2N4125 General Purpose NPN silicon switching and amplifier transistor ITT Semiconductors
1189 2N4125 Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1190 2N4126 General Purpose NPN silicon switching and amplifier transistor ITT Semiconductors
1191 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1192 2N4150 Silicon NPN power transistor, TO-5 package Silicon Transistor Corporation
1193 2N4210 Silicon NPN Power Transistor, TO-63 package Silicon Transistor Corporation
1194 2N4211 Silicon NPN Power Transistor, TO-63 package Silicon Transistor Corporation
1195 2N4231 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
1196 2N4231 Leaded Power Transistor General Purpose Central Semiconductor
1197 2N4231 Silicon NPN power transistor, TO-66 package Silicon Transistor Corporation
1198 2N4231A COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
1199 2N4231A Leaded Power Transistor General Purpose Central Semiconductor
1200 2N4231A POWER TRANSISTORS(5A,75W) MOSPEC Semiconductor


Datasheets found :: 18452
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |



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