| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1172 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1173 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1174 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1175 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1176 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1177 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1178 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1179 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1180 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1181 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1182 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1183 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1184 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1185 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1186 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1187 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 1188 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 1189 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1190 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 1191 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1192 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1193 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1194 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1195 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1196 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1197 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1198 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1199 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 1200 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
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