No. |
Part Name |
Description |
Manufacturer |
1171 |
J1N4446 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1172 |
J1N4447 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1173 |
J1N4448 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1174 |
J1N4449 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1175 |
J1N456 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1176 |
J1N456A |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1177 |
J1N457 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1178 |
J1N457A |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1179 |
LL4148 |
Small Signal Diode |
Fairchild Semiconductor |
1180 |
LL4148 |
Small Signal Diodes |
General Semiconductor |
1181 |
LL4150 |
Small Signal Diodes |
General Semiconductor |
1182 |
LL4151 |
Small Signal Diodes |
General Semiconductor |
1183 |
LL4448 |
Small Signal Diodes |
General Semiconductor |
1184 |
LS4148 |
1N4148 Quadro MELF SIGNAL DIODE |
Rectron Semiconductor |
1185 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1186 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1187 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1188 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1189 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
1190 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1191 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
1192 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1193 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
1194 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
1195 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1196 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
1197 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
1198 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
1199 |
MM4148 |
1N4148 mini-MELF SIGNAL DIODE |
Rectron Semiconductor |
1200 |
MM4150 |
1N4150 mini-MELF SIGNAL DIODE |
Rectron Semiconductor |
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