No. |
Part Name |
Description |
Manufacturer |
1171 |
TIP112 |
100 V, 2 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1172 |
TIP112 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
1173 |
TIP112 |
100 V, 4 A, 50 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1174 |
TIP112TU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1175 |
TIP115 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1176 |
TIP115 |
-60 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
1177 |
TIP115TU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1178 |
TIP116 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1179 |
TIP116 |
-80 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
1180 |
TIP116TU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1181 |
TIP117 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1182 |
TIP117 |
-100 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
1183 |
TIP117TU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
1184 |
TIP120 |
8A N-P-N darlington power transistor. 60V, 65W. |
General Electric Solid State |
1185 |
TIP120 |
NPN Epitaxial Power Mesa Silicon Darlington Transistor |
National Semiconductor |
1186 |
TIP120 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
1187 |
TIP120 |
60 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1188 |
TIP121 |
8A N-P-N darlington power transistor. 80V, 65W. |
General Electric Solid State |
1189 |
TIP121 |
NPN Epitaxial Power Mesa Silicon Darlington Transistor |
National Semiconductor |
1190 |
TIP121 |
80 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1191 |
TIP121 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
1192 |
TIP121 |
80 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1193 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
1194 |
TIP122 |
8A N-P-N darlington power transistor. 100V, 65W. |
General Electric Solid State |
1195 |
TIP122 |
NPN Epitaxial Power Mesa Silicon Darlington Transistor |
National Semiconductor |
1196 |
TIP122 |
100 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1197 |
TIP122 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
1198 |
TIP122 |
100 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1199 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
1200 |
TIP125 |
-60 V, -5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
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