No. |
Part Name |
Description |
Manufacturer |
1171 |
35TQC10MYF |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQC |
Panasonic |
1172 |
35TQC15MYF |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQC |
Panasonic |
1173 |
35TQC3R9MYF |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQC |
Panasonic |
1174 |
35TQS6R8MHD |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQS |
Panasonic |
1175 |
3N128 |
Silicon MOS Transistor |
General Electric Solid State |
1176 |
3N128 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
1177 |
3N138 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
1178 |
3N139 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
1179 |
3N140 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1180 |
3N141 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1181 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
1182 |
3N142 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1183 |
3N143 |
Silicon MOS Transistor |
General Electric Solid State |
1184 |
3N143 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
1185 |
3N152 |
Silicon MOS transistor. |
General Electric Solid State |
1186 |
3N152 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1187 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
1188 |
3N153 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1189 |
3N154 |
SILICON MOS TRANSISTOR |
General Electric Solid State |
1190 |
3N154 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
1191 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
1192 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1193 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
1194 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1195 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
1196 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1197 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1198 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1199 |
40080 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
1200 |
40081 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
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