| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2N753 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1172 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1173 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1174 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1175 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1176 |
2N914 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1177 |
2N914 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1178 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1179 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1180 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1181 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1182 |
2N929 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1183 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1184 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1185 |
2N995 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1186 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 1187 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 1188 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 1189 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 1190 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 1191 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 1192 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1193 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1194 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1195 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 1196 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 1197 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1198 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 1199 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1200 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| | | |
