| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2N3772 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1172 |
2N3773 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1173 |
2N3790 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1174 |
2N3791 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1175 |
2N3793 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1176 |
2N3794 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1177 |
2N3810 |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 1178 |
2N3810A |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 1179 |
2N3811 |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 1180 |
2N3811A |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 1181 |
2N3820 |
P-Channel General Purpose Amplifier |
Fairchild Semiconductor |
| 1182 |
2N3820_D26Z |
P-Channel General Purpose Amplifier |
Fairchild Semiconductor |
| 1183 |
2N3821 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
| 1184 |
2N3822 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
| 1185 |
2N3827 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1186 |
2N3858 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1187 |
2N3858A |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1188 |
2N3859 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1189 |
2N3859A |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1190 |
2N3859A_D75Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1191 |
2N3860 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1192 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 1193 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
| 1194 |
2N3903 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1195 |
2N3903 |
General purpose NPN transistor |
FERRANTI |
| 1196 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 1197 |
2N3903 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1198 |
2N3903 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 1199 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1200 |
2N3903-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| | | |
