| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2SK1332 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1172 |
2SK165 |
Si N-channel junction. Wide-band, low-noise amplifier. |
Panasonic |
| 1173 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
| 1174 |
2SK1961 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 1175 |
2SK2074 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 1176 |
2SK209 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 1177 |
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 1178 |
2SK2218 |
High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 1179 |
2SK222 |
N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications |
SANYO |
| 1180 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1181 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1182 |
2SK242 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1183 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1184 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1185 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 1186 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1187 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1188 |
2SK436 |
High-Frequency,Low-Frequency General-Purpose Amp Applications |
SANYO |
| 1189 |
2SK771 |
Low-Frequency General-Purpose Amp Applications |
SANYO |
| 1190 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 1191 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 1192 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1193 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 1194 |
3N163 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 1195 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 1196 |
3N164 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 1197 |
3N164 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 1198 |
3N165 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| 1199 |
3N165 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 1200 |
3N166 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| | | |
