| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
BD82004FVJ-MGE2 |
1.5A Current Limit High Side Switch ICs |
ROHM |
| 1172 |
BD82005FVJ-M |
1.5A Current Limit High Side Switch ICs |
ROHM |
| 1173 |
BD82005FVJ-MGE2 |
1.5A Current Limit High Side Switch ICs |
ROHM |
| 1174 |
BD82006FVJ-M |
2.4A Current Limit High Side Switch ICs |
ROHM |
| 1175 |
BD82006FVJ-MGE2 |
2.4A Current Limit High Side Switch ICs |
ROHM |
| 1176 |
BD82007FVJ-M |
2.4A Current Limit High Side Switch ICs |
ROHM |
| 1177 |
BD82007FVJ-MGE2 |
2.4A Current Limit High Side Switch ICs |
ROHM |
| 1178 |
BDC05 |
One Watt High Voltage Transistor |
Motorola |
| 1179 |
BDP947 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1180 |
BDP948 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1181 |
BDP949 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1182 |
BDP950 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1183 |
BDP951 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1184 |
BDP952 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1185 |
BDP953 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1186 |
BDP954 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1187 |
BDP955 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1188 |
BDP956 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 1189 |
BF420A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1190 |
BF421A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1191 |
BF422A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1192 |
BF423A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 1193 |
BQ51050B |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. |
Texas Instruments |
| 1194 |
BQ51050BRHLR |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 20-VQFN |
Texas Instruments |
| 1195 |
BQ51050BRHLT |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 20-VQFN |
Texas Instruments |
| 1196 |
BQ51050BYFPR |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 28-DSBGA |
Texas Instruments |
| 1197 |
BQ51050BYFPT |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 28-DSBGA |
Texas Instruments |
| 1198 |
BSP350CHIP |
Mini PROFET Smart High Side Switch |
Infineon |
| 1199 |
BSP350E6327 |
Mini PROFET Smart High Side Switch |
Infineon |
| 1200 |
BSP350E6327DELCO |
Mini PROFET Smart High Side Switch |
Infineon |
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