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Datasheets for HIGH POWER

Datasheets found :: 11790
Page: | 389 | 390 | 391 | 392 | 393 |
No. Part Name Description Manufacturer
11761 UPG2022T5G NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH California Eastern Laboratories
11762 UPG2022T5G-E1-A NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH California Eastern Laboratories
11763 UPG2022T5G-E1-A 4.8 to 5.85 GHz high power GaAs MMIC SPDT switch. NEC
11764 UPG2022TB NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH California Eastern Laboratories
11765 UPG2022TB-E4-A NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH California Eastern Laboratories
11766 UPG2022TB-E4-A 4.8 to 5.85 GHz high power GaAs MMIC SPDT switch. NEC
11767 UPG2027TQ NECs L-BAND 4W HIGH POWER SPDT SWITCH IC NEC
11768 UPG2027TQ-E1-A NECs L-BAND 4W HIGH POWER SPDT SWITCH IC NEC
11769 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11770 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11771 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11772 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11773 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11774 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11775 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11776 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11777 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11778 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11779 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11780 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11781 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11782 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11783 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11784 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
11785 WSL HIGH POWER Power Metal Strip® Resistors, High Power, Low Value, Surface Mount Vishay
11786 WSL HIGH POWER Power Metal Strip® Resistors, High Power, Low Value, Surface Mount Vishay
11787 WSR HIGH POWER Power Metal Strip® Resistors, High Power, Low Value, Surface Mount Vishay
11788 WSR HIGH POWER Power Metal Strip® Resistors, High Power, Low Value, Surface Mount Vishay
11789 WSZ Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power Vishay
11790 ZMA0411 Power Type Metal Film Resistors, Metal film resistor with high power rating, High temperature coating, For applications in power electronics Vishay


Datasheets found :: 11790
Page: | 389 | 390 | 391 | 392 | 393 |



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