No. |
Part Name |
Description |
Manufacturer |
11761 |
UPG2022T5G |
NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH |
California Eastern Laboratories |
11762 |
UPG2022T5G-E1-A |
NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH |
California Eastern Laboratories |
11763 |
UPG2022T5G-E1-A |
4.8 to 5.85 GHz high power GaAs MMIC SPDT switch. |
NEC |
11764 |
UPG2022TB |
NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH |
California Eastern Laboratories |
11765 |
UPG2022TB-E4-A |
NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH |
California Eastern Laboratories |
11766 |
UPG2022TB-E4-A |
4.8 to 5.85 GHz high power GaAs MMIC SPDT switch. |
NEC |
11767 |
UPG2027TQ |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC |
NEC |
11768 |
UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC |
NEC |
11769 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11770 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11771 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11772 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11773 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11774 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11775 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11776 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11777 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11778 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11779 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11780 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11781 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11782 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11783 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11784 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
11785 |
WSL HIGH POWER |
Power Metal Strip® Resistors, High Power, Low Value, Surface Mount |
Vishay |
11786 |
WSL HIGH POWER |
Power Metal Strip® Resistors, High Power, Low Value, Surface Mount |
Vishay |
11787 |
WSR HIGH POWER |
Power Metal Strip® Resistors, High Power, Low Value, Surface Mount |
Vishay |
11788 |
WSR HIGH POWER |
Power Metal Strip® Resistors, High Power, Low Value, Surface Mount |
Vishay |
11789 |
WSZ |
Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power |
Vishay |
11790 |
ZMA0411 |
Power Type Metal Film Resistors, Metal film resistor with high power rating, High temperature coating, For applications in power electronics |
Vishay |
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