| No. |
Part Name |
Description |
Manufacturer |
| 11761 |
20SI10 |
20A 1000V Silicon Rectifier Diode |
IPRS Baneasa |
| 11762 |
20SI10R |
20A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11763 |
20SI12 |
20A 1200V Silicon Rectifier Diode |
IPRS Baneasa |
| 11764 |
20SI12R |
20A 1200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11765 |
20SI15 |
20A 1500V Silicon Rectifier Diode |
IPRS Baneasa |
| 11766 |
20SI15R |
20A 1500V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11767 |
20SI1R |
20A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11768 |
20SI2 |
20A 200V Silicon Rectifier Diode |
IPRS Baneasa |
| 11769 |
20SI2R |
20A 200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11770 |
20SI3 |
20A 300V Silicon Rectifier Diode |
IPRS Baneasa |
| 11771 |
20SI3R |
20A 300V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11772 |
20SI4 |
20A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 11773 |
20SI4R |
20A 400V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11774 |
20SI5 |
20A 500V Silicon Rectifier Diode |
IPRS Baneasa |
| 11775 |
20SI5R |
20A 500V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11776 |
20SI6 |
20A 600V Silicon Rectifier Diode |
IPRS Baneasa |
| 11777 |
20SI6R |
20A 600V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11778 |
20SI8 |
20A 800V Silicon Rectifier Diode |
IPRS Baneasa |
| 11779 |
20SI8R |
20A 800V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 11780 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 11781 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 11782 |
211-07 |
Motorola case, dimensions, similar with .380 FLANGE |
Motorola |
| 11783 |
211-11 |
Motorola case, dimensions, similar with .500 FLANGE |
Motorola |
| 11784 |
211A-04 |
Motorola case, dimensions, similar with TO-220AB |
Motorola |
| 11785 |
2120B |
Strain Gage Signal Conditioner/Amplifier |
Vishay |
| 11786 |
22-03 |
Motorola case, dimensions, similar with TO-206AA |
Motorola |
| 11787 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 11788 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 11789 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 11790 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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