No. |
Part Name |
Description |
Manufacturer |
11761 |
NTE6093 |
Silicon Rectifier Dual, Schottky Barrier |
NTE Electronics |
11762 |
NTE6094 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
11763 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
11764 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
11765 |
NTGD4169F |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 |
ON Semiconductor |
11766 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
11767 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
11768 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11769 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11770 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11771 |
NTHD4N02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
11772 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11773 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11774 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11775 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
11776 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11777 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11778 |
NTHD4P02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
11779 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11780 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11781 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11782 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
11783 |
NTLGF3402P |
Power MOSFET and Schottky Diode, -20 V, -3.9 A, P-Channel |
ON Semiconductor |
11784 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
11785 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
11786 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
11787 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
11788 |
NTLJF3117P |
Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel |
ON Semiconductor |
11789 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
11790 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| | | |