| No. |
Part Name |
Description |
Manufacturer |
| 11761 |
MAX1947ETAXY |
Low Input/Output Voltage Step-Up DC-DC Converter with RESET |
MAXIM - Dallas Semiconductor |
| 11762 |
MAX4073TAXK |
Low-Cost, SC70, Voltage-Output, High-Side Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 11763 |
MAX4073TAXK+ |
Low-Cost, SC70, Voltage-Output, High-Side Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 11764 |
MAX4073TAXK+T |
Low-Cost, SC70, Voltage-Output, High-Side Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 11765 |
MAX4073TAXK+TG65 |
Low-Cost, SC70, Voltage-Output, High-Side Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 11766 |
MAX4073TAXK-T |
Low-Cost, SC70, Voltage-Output, High-Side Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 11767 |
MAYS0750Y |
Silicon epitaxial planar type |
Panasonic |
| 11768 |
MAYS075GY |
Silicon epitaxial planar type |
Panasonic |
| 11769 |
MBT2222 |
SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS |
etc |
| 11770 |
MBT2222A |
SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS |
etc |
| 11771 |
MC1550 |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11772 |
MC1550F |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11773 |
MC1550G |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11774 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11775 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11776 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11777 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11778 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11779 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11780 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 11781 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11782 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 11783 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11784 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11785 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11786 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11787 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11788 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11789 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11790 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
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