| No. |
Part Name |
Description |
Manufacturer |
| 11791 |
SUT507EF |
Epitaxial Planar type NPN Silicon Transistor |
AUK Corp |
| 11792 |
SUT509EF |
NPN/PNP Epitaxial Planar Silicon Transistor |
AUK Corp |
| 11793 |
SUT510EF |
NPN/PNP Epitaxial Planar Silicon Transistor |
AUK Corp |
| 11794 |
SY625/05-to-SY625/2 |
Fast epitaxial power rectifier diodes, possibly equivalent BYW31 |
RFT |
| 11795 |
SY710 |
Fast epitaxial power rectifier diode, possibly equivalent BYW29 |
RFT |
| 11796 |
SY715 |
Fast epitaxial power rectifier diode, possibly equivalent BYV79 |
RFT |
| 11797 |
TA1275 |
EPITAXIAL PLANAR PNP TRANSISTOR (COLOR TV VERTICAL DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT) |
Korea Electronics (KEC) |
| 11798 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 11799 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 11800 |
TA76 |
Epitaxial Planar Silicon Transistor Arrays |
ROHM |
| 11801 |
TBC327 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11802 |
TBC328 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11803 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11804 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11805 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11806 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11807 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11808 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11809 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11810 |
TBC556 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11811 |
TBC557 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11812 |
TBC558 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11813 |
TBC559 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11814 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11815 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11816 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11817 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11818 |
TEC8012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11819 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11820 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| | | |
