| No. |
Part Name |
Description |
Manufacturer |
| 11821 |
2N3823JTXV |
N-Channel JFET High Frequency Amplifier |
Intersil |
| 11822 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 11823 |
2N383 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 11824 |
2N3838 |
Complementary Dual Amplifier Transistor |
Motorola |
| 11825 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 11826 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 11827 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 11828 |
2N3839 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 11829 |
2N3840 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 11830 |
2N3841 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 11831 |
2N3842 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 11832 |
2N3859A |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 11833 |
2N3859A_D75Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 11834 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 11835 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 11836 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 11837 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11838 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 11839 |
2N3870 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 11840 |
2N3870 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
| 11841 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 11842 |
2N3871 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 11843 |
2N3871 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
| 11844 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 11845 |
2N3872 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 11846 |
2N3872 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
| 11847 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 11848 |
2N3873 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 11849 |
2N3873 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
| 11850 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
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