| No. |
Part Name |
Description |
Manufacturer |
| 11821 |
BSY52 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11822 |
BSY52 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11823 |
BSY53 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11824 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11825 |
BSY54 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11826 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11827 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 11828 |
BSY55 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11829 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11830 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 11831 |
BSY56 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11832 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11833 |
BSY58 |
NPN RF transistor for switch applications |
Siemens |
| 11834 |
BSY58 |
NPN Transistor industrial type |
Siemens |
| 11835 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 11836 |
BSY59 |
PNP Transistor industrial type |
Siemens |
| 11837 |
BSY62 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11838 |
BSY62 |
NPN RF transistor for switch applications |
Siemens |
| 11839 |
BSY62 |
NPN Transistor industrial type |
Siemens |
| 11840 |
BSY62A |
NPN RF transistor for switch applications |
Siemens |
| 11841 |
BSY62B |
NPN RF transistor for switch applications |
Siemens |
| 11842 |
BSY63 |
NPN RF transistor for switch applications |
Siemens |
| 11843 |
BSY63 |
NPN Transistor industrial type |
Siemens |
| 11844 |
BSY79 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11845 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 11846 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 11847 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 11848 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 11849 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 11850 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
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