| No. |
Part Name |
Description |
Manufacturer |
| 11881 |
1N3595 |
Low leakage silicon signal diode |
SESCOSEM |
| 11882 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 11883 |
1N3595E |
Low leakage silicon signal diode |
SESCOSEM |
| 11884 |
1N3595S |
Low leakage silicon signal diode |
SESCOSEM |
| 11885 |
1N3595TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 11886 |
1N3596 |
Silicon Signal Diode |
Motorola |
| 11887 |
1N3597 |
Silicon Signal Diode |
Motorola |
| 11888 |
1N3598 |
Silicon Signal Diode |
Motorola |
| 11889 |
1N3599 |
Silicon Signal Diode |
Motorola |
| 11890 |
1N360 |
Rectifier Diode |
Motorola |
| 11891 |
1N360 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
| 11892 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 11893 |
1N3600 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 11894 |
1N3600 |
High conductance ultra fast diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 11895 |
1N3600 |
Silicon Planar Diode |
ITT Semiconductors |
| 11896 |
1N3600 |
Signal or Computer Diode |
Microsemi |
| 11897 |
1N3600 |
Signal or Computer Diode |
Microsemi |
| 11898 |
1N3600 |
Silicon Signal Diode |
Motorola |
| 11899 |
1N3600 |
Diode Data |
National Semiconductor |
| 11900 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 11901 |
1N3600 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 11902 |
1N3600DUP |
Signal or Computer Diode |
Microsemi |
| 11903 |
1N3600UR |
SWITCHING DIODE |
Compensated Devices Incorporated |
| 11904 |
1N3600USN |
Silicon Planar Diode |
ITT Semiconductors |
| 11905 |
1N3601 |
Silicon Signal Diode |
Motorola |
| 11906 |
1N3602 |
Silicon Signal Diode |
Motorola |
| 11907 |
1N3603 |
Silicon Signal Diode |
Motorola |
| 11908 |
1N3604 |
Silicon epitaxy planar diode |
ITT Industries |
| 11909 |
1N3604 |
Silicon Planar Diode |
ITT Semiconductors |
| 11910 |
1N3604 |
Silicon Signal Diode |
Motorola |
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