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Datasheets for RANSISTO

Datasheets found :: 95977
Page: | 393 | 394 | 395 | 396 | 397 | 398 | 399 | 400 | 401 |
No. Part Name Description Manufacturer
11881 2N5395 N-Channel Junction FET (Field-Effect Transistor) Motorola
11882 2N5396 N-Channel Field Effect Transistor General Purpose Amelco Semiconductor
11883 2N5396 N-Channel Junction FET (Field-Effect Transistor) Motorola
11884 2N5397 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
11885 2N5397 N-Channel Junction FET (Field-Effect Transistor) Motorola
11886 2N5397 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
11887 2N5398 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
11888 2N5398 N-Channel Junction FET (Field-Effect Transistor) Motorola
11889 2N5398 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
11890 2N5399 Silicon NPN Transistor Motorola
11891 2N539A Germanium PNP Transistor Motorola
11892 2N539A Germanium PNP Power Transistor, TO-10 Package Silicon Transistor Corporation
11893 2N539A Germanium PNP Power Transistor, TO-10 Package Silicon Transistor Corporation
11894 2N54 Germanium PNP Transistor Motorola
11895 2N540 Germanium PNP Transistor Motorola
11896 2N540 Germanium PNP Power Transistor, TO-10 Package Silicon Transistor Corporation
11897 2N540 Germanium PNP Power Transistor, TO-10 Package Silicon Transistor Corporation
11898 2N5400 AMPLIFIER TRANSISTOR PNP SILICON Boca Semiconductor Corporation
11899 2N5400 Leaded Small Signal Transistor General Purpose Central Semiconductor
11900 2N5400 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE Continental Device India Limited
11901 2N5400 PNP Silicon Epitaxial Planar Transistor Honey Technology
11902 2N5400 High Voltage Transistor Korea Electronics (KEC)
11903 2N5400 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
11904 2N5400 PNP Transistor - General purpose AMPS and switches National Semiconductor
11905 2N5400 Amplifier Transistor(PNP Silicon) ON Semiconductor
11906 2N5400 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
11907 2N5400 PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
11908 2N5400 Silicon PNP epitaxial transistor (PCT Process) TOSHIBA
11909 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
11910 2N5400RLRA Amplifier Transistor PNP ON Semiconductor


Datasheets found :: 95977
Page: | 393 | 394 | 395 | 396 | 397 | 398 | 399 | 400 | 401 |



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