| No. |
Part Name |
Description |
Manufacturer |
| 11881 |
2N5397 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 11882 |
2N5397 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 11883 |
2N5397 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 11884 |
2N5398 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 11885 |
2N5398 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 11886 |
2N5398 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 11887 |
2N5399 |
Silicon NPN Transistor |
Motorola |
| 11888 |
2N539A |
Germanium PNP Transistor |
Motorola |
| 11889 |
2N539A |
Germanium PNP Power Transistor, TO-10 Package |
Silicon Transistor Corporation |
| 11890 |
2N539A |
Germanium PNP Power Transistor, TO-10 Package |
Silicon Transistor Corporation |
| 11891 |
2N54 |
Germanium PNP Transistor |
Motorola |
| 11892 |
2N540 |
Germanium PNP Transistor |
Motorola |
| 11893 |
2N540 |
Germanium PNP Power Transistor, TO-10 Package |
Silicon Transistor Corporation |
| 11894 |
2N540 |
Germanium PNP Power Transistor, TO-10 Package |
Silicon Transistor Corporation |
| 11895 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 11896 |
2N5400 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11897 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 11898 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 11899 |
2N5400 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 11900 |
2N5400 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 11901 |
2N5400 |
PNP Transistor - General purpose AMPS and switches |
National Semiconductor |
| 11902 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
| 11903 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 11904 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 11905 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 11906 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 11907 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 11908 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 11909 |
2N5400S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 11910 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
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