| No. |
Part Name |
Description |
Manufacturer |
| 11911 |
MP1008G-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=10A |
Comchip Technology |
| 11912 |
MP1008G-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=10A |
Comchip Technology |
| 11913 |
MP1010G-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=10A |
Comchip Technology |
| 11914 |
MP1010G-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=10A |
Comchip Technology |
| 11915 |
MP110B |
25 Ampere PNP ADE Germanium Power Switching Transistor 90V, 106W |
Motorola |
| 11916 |
MPE-24H |
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V |
Sanken |
| 11917 |
MPE-24H |
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V |
Sanken |
| 11918 |
MPE-29G |
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package |
Sanken |
| 11919 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
| 11920 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 11921 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11922 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11923 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11924 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11925 |
MPS6531 |
Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 11926 |
MPS6532 |
Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. |
General Electric Solid State |
| 11927 |
MPS6534 |
Planar passivated epitaxial PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 11928 |
MR2266 |
800V, 1.0A High-Voltage, axial-lead, silicon rectifiers, designed for television "damper" diode service |
Motorola |
| 11929 |
MR2271 |
300V, 1A Fast recovery silicon rectifier designed for video power supply applications |
Motorola |
| 11930 |
MR2273 |
800V, 1.0A High-Voltage, axial-lead, silicon rectifiers, designed for television "damper" diode service |
Motorola |
| 11931 |
MSK4370 |
10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER |
M.S. Kennedy Corp. |
| 11932 |
MSK4370HU |
10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER |
M.S. Kennedy Corp. |
| 11933 |
MTB50N06V |
Power MOSFET 42 A, 60V, N-Channel D2PAK |
ON Semiconductor |
| 11934 |
MTP3055V |
TMOS Power FET 60V, 0.15Ohm |
ON Semiconductor |
| 11935 |
MTP3055VL |
60V, SINGLE, TO-220, N-Channel |
Fairchild Semiconductor |
| 11936 |
MU9C9760 |
MU9C9760,9760V,9760A SYNDAC |
etc |
| 11937 |
MU9C9760-YYDC |
MU9C9760,9760V,9760A SYNDAC |
etc |
| 11938 |
MU9C9760A |
MU9C9760,9760V,9760A SYNDAC |
etc |
| 11939 |
MU9C9760A-YYDC |
MU9C9760,9760V,9760A SYNDAC |
etc |
| 11940 |
MU9C9760V |
MU9C9760,9760V,9760A SYNDAC |
etc |
| | | |
