| No. |
Part Name |
Description |
Manufacturer |
| 11941 |
BD9300FV |
1-channel DC/DC converter controller |
ROHM |
| 11942 |
BD9486F |
Boost 1channel white LED driver For large LCDs |
ROHM |
| 11943 |
BD9486F-GE2 |
Boost 1channel white LED driver For large LCDs |
ROHM |
| 11944 |
BD9488F |
Boost 1channel white LED driver For large LCDs |
ROHM |
| 11945 |
BD9488F-GE2 |
Boost 1channel white LED driver For large LCDs |
ROHM |
| 11946 |
BD9862MUV |
Multi-channel System Power Supply ICs for Small to Middle PANEL |
ROHM |
| 11947 |
BD9862MUV-E2 |
Multi-channel System Power Supply ICs for Small to Middle PANEL |
ROHM |
| 11948 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 11949 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 11950 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 11951 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 11952 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 11953 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 11954 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 11955 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 11956 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 11957 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 11958 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 11959 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 11960 |
BF1100 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 11961 |
BF1100WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 11962 |
BF1101 |
N-channel dual-gate MOS-FETs |
Philips |
| 11963 |
BF1101R |
N-channel dual-gate MOS-FETs |
Philips |
| 11964 |
BF1101WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 11965 |
BF1101WR |
N-channel dual-gate MOS-FETs |
Philips |
| 11966 |
BF1102 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 11967 |
BF1102 |
Dual N-channel dual gate MOS-FETs |
Philips |
| 11968 |
BF1102R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 11969 |
BF1102R |
Dual N-channel dual gate MOS-FETs |
Philips |
| 11970 |
BF1105 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
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