| No. |
Part Name |
Description |
Manufacturer |
| 11941 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11942 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11943 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11944 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 11945 |
TEC8012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11946 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11947 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11948 |
TEC9012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11949 |
TEC9013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11950 |
TEC9014 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11951 |
TEC9015 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11952 |
TEC9016 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11953 |
TED1402 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11954 |
TED1502 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11955 |
TED1602 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11956 |
TED1702 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11957 |
TED1802 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 11958 |
TID21A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 11959 |
TID22A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 11960 |
TID23A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 11961 |
TID24A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 11962 |
TID25A |
16-way silicon epitaxial planar diode array |
Texas Instruments |
| 11963 |
TID26A |
16-way silicon epitaxial planar diode array |
Texas Instruments |
| 11964 |
TID29A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 11965 |
TID30A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 11966 |
TIP100 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 11967 |
TIP100 |
60 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 11968 |
TIP101 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 11969 |
TIP101 |
80 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 11970 |
TIP102 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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