| No. |
Part Name |
Description |
Manufacturer |
| 11971 |
BU606 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11972 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 11973 |
BU606 |
High voltage transistor for switching applications |
SGS-ATES |
| 11974 |
BU606D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11975 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11976 |
BU606D |
High voltage transistor for switching applications |
SGS-ATES |
| 11977 |
BU607 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11978 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 11979 |
BU607 |
High voltage transistor for switching applications |
SGS-ATES |
| 11980 |
BU607D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11981 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11982 |
BU607D |
High voltage transistor for switching applications |
SGS-ATES |
| 11983 |
BU608 |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11984 |
BU608 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 11985 |
BU608 |
High voltage transistor for switching applications |
SGS-ATES |
| 11986 |
BU608D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 11987 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11988 |
BU608D |
High voltage transistor for switching applications |
SGS-ATES |
| 11989 |
BU800 |
5A NPN silicon power transistor 1500V 60W with integrated damper diode |
Motorola |
| 11990 |
BU806 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 11991 |
BU806 |
High voltage silicon darlington NPN transistor - plastic case |
IPRS Baneasa |
| 11992 |
BU806R |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 11993 |
BU807 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 11994 |
BU807 |
High voltage silicon darlington NPN transistor - plastic case |
IPRS Baneasa |
| 11995 |
BU807R |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 11996 |
BU908F |
TO-3P Fully Isolated Plastic Package Transistor CDIL |
Continental Device India Limited |
| 11997 |
BU920 |
NPN power transistor for automotive ignition applications, 400V, 10A |
SGS Thomson Microelectronics |
| 11998 |
BU920P |
NPN power transistor for automotive ignition applications, 400V, 10A |
SGS Thomson Microelectronics |
| 11999 |
BU920PFI |
NPN power transistor for automotive ignition applications, 400V, 10A |
SGS Thomson Microelectronics |
| 12000 |
BU920T |
NPN power transistor for automotive ignition applications, 400V, 10A |
SGS Thomson Microelectronics |
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