No. |
Part Name |
Description |
Manufacturer |
11971 |
TS9008SCX5 |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11972 |
TS9011ACX |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11973 |
TS9011PCX |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11974 |
TS9011PCY |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11975 |
TS90135CW |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11976 |
TS9013KCW |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11977 |
TS9013KCY |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11978 |
TS9013SCW |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11979 |
TS9013SCY |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11980 |
TS9015CX5 |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11981 |
TS9230CS |
Power Management Ics-Linear Voltage Regulator-Low Dropout Voltage Regulator |
Taiwan Semiconductor |
11982 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
11983 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
11984 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
11985 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
11986 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
11987 |
TSH181CT |
Power Management Ics-Hall Effect Sensor-Latch |
Taiwan Semiconductor |
11988 |
TSH188CT |
Power Management Ics-Hall Effect Sensor-Latch |
Taiwan Semiconductor |
11989 |
TSH188CX |
Power Management Ics-Hall Effect Sensor-Latch |
Taiwan Semiconductor |
11990 |
TSH190CT |
Power Management Ics-Hall Effect Sensor-Latch |
Taiwan Semiconductor |
11991 |
TSH190CX |
Power Management Ics-Hall Effect Sensor-Latch |
Taiwan Semiconductor |
11992 |
TSH248CX |
Power Management Ics-Hall Effect Sensor-Omni-Polar |
Taiwan Semiconductor |
11993 |
TSH251CT |
Power Management Ics-Hall Effect Sensor-Omni-Polar |
Taiwan Semiconductor |
11994 |
TSH251CX |
Power Management Ics-Hall Effect Sensor-Omni-Polar |
Taiwan Semiconductor |
11995 |
TSH253CT |
Power Management Ics-Hall Effect Sensor-Omni-Polar |
Taiwan Semiconductor |
11996 |
TSH253CX |
Power Management Ics-Hall Effect Sensor-Omni-Polar |
Taiwan Semiconductor |
11997 |
TSH282CT |
Power Management Ics-Hall Effect Sensor-Unipolar |
Taiwan Semiconductor |
11998 |
TSH282CX |
Power Management Ics-Hall Effect Sensor-Unipolar |
Taiwan Semiconductor |
11999 |
TSH481CT |
Power Management Ics-Hall Effect Sensor-Linear |
Taiwan Semiconductor |
12000 |
TSM2N60 |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
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