No. |
Part Name |
Description |
Manufacturer |
12001 |
PZTA92 |
EPITAXIAL PLANAR PNP TRANSISTOR |
Korea Electronics (KEC) |
12002 |
Q62702-B70 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
12003 |
RCA-2N3600 |
Silicon NPN Epitaxial Planar VHF Transistor |
RCA Solid State |
12004 |
RCA-2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
12005 |
RCA-2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
12006 |
RCA-2N918 |
Silicon NPN Epitaxial Planar VHF Transistor |
RCA Solid State |
12007 |
RCA-40290 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
12008 |
RCA-40291 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
12009 |
RCA-40292 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
12010 |
RCA-40637A |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
12011 |
RCA3773 |
Silicon N-P-N epitaxial-base high power transistor. 160V, 150W. |
General Electric Solid State |
12012 |
RCA8638C |
Silicon N-P-N epitaxial-base high power transistor. 140V, 200W. |
General Electric Solid State |
12013 |
RCA8638D |
Silicon N-P-N epitaxial-base high power transistor. 120V, 200W. |
General Electric Solid State |
12014 |
RCA8638E |
Silicon N-P-N epitaxial-base high power transistor. 100V, 200W. |
General Electric Solid State |
12015 |
RCA9116C |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. |
General Electric Solid State |
12016 |
RCA9116D |
Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. |
General Electric Solid State |
12017 |
RCA9116E |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. |
General Electric Solid State |
12018 |
RCA9166A |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
12019 |
RCA9166B |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
12020 |
RN1001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12021 |
RN1002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12022 |
RN1003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12023 |
RN1004 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12024 |
RN1005 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12025 |
RN1006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12026 |
RN1007 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12027 |
RN1008 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12028 |
RN1009 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12029 |
RN1010 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
12030 |
RN1011 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
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